Verifica del 10 febbraio 2004 - solution

1. 369163 eV; 960837 eV; 1471836 eV; 0.9378 c = 2.811×10⁸ m/s
2. 574 nm; 16.55 mA
3. µ_BB 10/3 = 9.674 neV = 1.546×10^-27 J = 7.781×10^-5 cm^-1; ratio = 0.000229 << 1
4. metal for Δ < t+t'; Parameter set 1: a metal with E_F = 0.5 eV; Parameter set 2: a semiconductor (gap = 0.05 eV) with E_F = 0.525 eV; m^* = h² /(t'a²) = 3.39×10^-30 kg = 3.72 m_e
5. Call µ the reduced mass. Rotational: Δµ/µ [=0.000309 for HBr]; Roto-vibrational: (A+C)/(1+B) [=0.000153 for HBr], with A=[1-(µ/µ')^1/2] = ½ Δµ/µ, B=ω_rot/ω_vib, C=B Δµ/µ, where ω_rot is a shorthand for h/(µR²). The C term is usually completely negligible, the B term is usually also a small correction.